tsm 0 6 0n03 e cp 3 0 v n - channel power mosfet 1 / 5 version: a14 to - 252 (dpak) key parameter performance parameter value unit v ds 30 v r ds(on) (max) v gs = 10v 6 m v gs = 4 .5v 9 q g 11.1 nc features fast switching g - s esd protection diode embedded block diagram n - channel mosfet with esd pro tection ordering information part no. package packing tsm 06 0 n0 3 e c p rog to - 2 52 2.5kpcs / 13 reel note: g denotes for halogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony com pounds absolute maximum rating s ( t c = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 3 0 v gate - source voltage v gs 20 v continuous drain current t c =25oc i d 70 a t c = 100 oc 44 a pulsed drain current (note 1) i dm 280 a single pulse avalanche energy (note 2) e as 88 mj single pulse avalanche current (note 2 ) i a s 42 a total power dissipation @ t c =25 o c p d 54 w derate above t c =25 o c 0.43 w/ oc operating junction temperature t j 150 oc storage temperature range t stg - 55 to +150 o c thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 2.3 o c/w thermal resistance - junction to ambient r ? ja 62 o c/w pin definition : 1. gate 2. drain 3. source
tsm 0 6 0n03 e cp 3 0 v n - channel power mosfet 2 / 5 version: a14 electrical specifications ( t c =25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250a bv dss 3 0 -- -- v drain - source on - state resistance v gs = 10v, i d = 2 0 a r ds(on) -- 4.8 6 m v gs = 4.5v, i d = 1 0 a -- 6.5 9 gate threshold voltage v ds = v gs , i d = 250a v gs(th) 1 1. 6 2. 5 v zero gate voltage drain current v ds = 3 0v, v gs = 0v i dss -- -- 1 a v ds = 24 v, t j = 125 oc -- -- 10 gate body leakage v gs = 20v, v ds = 0v i gss -- -- 10 a forward transconductance v ds = 10v, i d = 10 a g fs -- 1 2.5 -- s dynamic total gate charge (note 3 , 4 ) v ds = 15v, i d = 20a, v gs = 4.5v q g -- 11.1 -- nc gate - source charge (not e 3 , 4 ) q gs -- 1.85 -- gate - drain charge (note 3 , 4 ) q gd -- 6.8 -- input capacitance v ds = 25v, v gs = 0v, f = 1mhz c iss -- 1210 -- pf output capacitance c oss -- 190 -- reverse transfer capacitance c rss -- 100 -- gate resistance v gs =0v, v ds =0v, f =1mhz r g -- 2.5 -- switching turn - on delay time (note 3 , 4 ) v dd = 15 v , v gs =10v , r g = 3.3 ? , i d = - 1 5 a t d(on) -- 7.5 -- ns turn - on rise time (note 3 , 4 ) t r -- 14.5 -- turn - off delay time (note 3 , 4 ) t d(off) -- 35.2 -- turn - off fall time (note 3 , 4 ) t f -- 9.6 -- source - drain diode ratings and characteristic continuous drain - source diode v g =v d =0v force current i s -- -- 7 0 a pulse drain - source diode i s m -- -- 28 0 a diode - source forward voltage v gs = 0v , i s = 1a v sd -- -- 1 v note : 1. repetitive rating : pu lsed width limited by maximum junction temperature. 2. v dd =25v,v gs =10v,l= 0. 1mh,i as = 42 a.,r g =25 ? ,starting t j =25 o c 3. the data tested by pulsed , pulse width 300 s , duty cycle 2% 4. essentially independent of operating temperature .
tsm 0 6 0n03 e cp 3 0 v n - channel power mosfet 3 / 5 version: a14 electrical characteristics curve continuous drain current vs. tc normalized rdson vs. t j normalized v th vs. t j gate charge waveform normalized transien t impedance maximum safe operation area i d , continuous drain current (a) t c , case temperature ( o c ) t j , junction temperature ( o c ) normalized on resistance t j , junction temperature ( o c ) normalized gate thres hold voltage (v) qg , gate charge ( nc ) v gs , gate to source voltage (v) normalized thermal response (r jc d , continuous drain current (a) v ds , drain to source voltage (v)
tsm 0 6 0n03 e cp 3 0 v n - channel power mosfet 4 / 5 version: a14 to - 252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 0 6 0n03 e cp 3 0 v n - channel power mosfet 5 / 5 version: a14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liabil ity for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and cond itions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products sh own herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from suc h improper use or sale.
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